Modelling and fabrication of wide temperature range Al<sub>0.24</sub>Ga<sub>0.76</sub>As/GaAs Hall magnetic sensors
نویسندگان
چکیده
Abstract Silicon Hall-effect sensors have been widely used in industry and research fields due to their straightforward fabrication process CMOS compatibility. However, as material property limitations, technicians usually implement complex circuits improve the sensors’ performance including temperature drift offset compensation for fitting tough situation, but it is no doubt that increases design complexity sensor area. Gallium arsenide (GaAs) a superior of device because its large mobility stable characteristics. Concerning there specified modelling GaAs device, this paper investigated by using finite element method (FEM) software Silvaco TCAD ® help guide fabrication. The modeled has fabricated experimental results are agreement with simulation results. Comparing our previous silicon sensor, demonstrates potential reliable benchmark future Hall magnetic developments.
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ژورنال
عنوان ژورنال: Journal of Semiconductors
سال: 2022
ISSN: ['1674-4926', '2058-6140']
DOI: https://doi.org/10.1088/1674-4926/43/3/034101